Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Stretchable inorganic-semiconductor electronic systems. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. 2D crystal semiconductors: intimate contacts. Introduction to organic thin film transistors and design of n-channel organic semiconductors. Newman C R, Frisbie C D, da Silva Filho D A, et al. Organic thin film transistors for large area electronics. Adv Funct Mater, 2020, 30: 1904588ĭimitrakopoulos C D, Malenfant P R L.
Printable semiconductors for backplane TFTs of flexible OLED displays. Nanomaterials in transistors: from high-performance to thin-film applications. Nanometre-scale electronics with III-V compound semiconductors. Two-dimensional semiconductors: from materials preparation to electronic applications. In this review, we discuss the research progresses of graphene-based VFET, including the its basic device structure, carrier transport mechanism, device performance and novel properties demonstrated. With finite density of states and the weak electrostatic screening effect, graphene exhibits a field-tunable work-function and partial electrostatic transparency, it can thus function as an “active” contact with tunable graphene-channel junction, enabling entirely new transistor functions or higher device performance not previously possible. Recently, with the emerge of graphene, a new type of graphene based VFETs has been developed. To enable the effective gate modulation and current switching behavior, the electrode of conventional VFET is largely based on perforated metals, in which the gate electrical field could penetrate through. Vertical field effect transistors (VFETs), where the channel material is sandwiched between source-drain electrodes and the channel length is simply determined by its body thickness, have attracted considerable interest for high performance electronics owning to their intrinsic short channel length.
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